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 APT2X21DC60J APT2X20DC60J
ISOTOP(R) SiC Diode Power Module
2 3
VRRM = 600V IF = 20A @ TC = 100C
Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers
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3
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4
Features
Anti-Parallel Anti-Parallel
APT2X60DC120J APT2X20DC60J 1 4
*
Parallel Parallel APT2X21DC60J APT2X61DC120J
2 4
3
* * * Benefits
SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
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ISOTOP(R)
* * * * * *
Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant
Absolute maximum ratings (per leg)
Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 600 TC = 100C TC = 25C 20 250 Unit V A
APT2X21_20DC60J - Rev 0 February, 2009
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
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APT2X21DC60J APT2X20DC60J
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics (per leg)
Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C IF = 20A Tj = 175C Tj = 25C VR = 600V Tj = 175C IF = 20A, VR = 300V di/dt =800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2 100 200 28 130 100 Max 1.8 2.4 400 2000 Unit V A nC pF
Thermal and package characteristics (per leg)
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient (Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 1.35 20 175 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
2500 -55
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
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* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
1
Dimensions in Millimeters and (Inches)
www.microsemi.com
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APT2X21_20DC60J - Rev 0 February, 2009
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APT2X21DC60J APT2X20DC60J
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 0.9 1.2 1 0.8 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 400
TJ=25C
40
IF Forward Current (A) IR Reverse Current (A)
350 300 250 200 150 100 50 0 200 300
TJ=175C
30
TJ=75C TJ=175C
TJ=125C TJ=75C
20
TJ=125C
10
TJ=25C
0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
400 500 600 700 VR Reverse Voltage (V)
800
800 C, Capacitance (pF)
600
400
200
0 1 10 100 VR Reverse Voltage 1000
APT2X21_20DC60J - Rev 0 February, 2009
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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